Oxygen treatment of replacement work-function metals in CMOS transistor gates
US9384962B2 · kind B2 · utility
5Cited by
21References
22Claims
0Family size
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Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.