Patent · US Active

Dual-metal gate CMOS devices and method for manufacturing the same

US9384986B2 · kind B2 · utility

7Cited by

1References

10Claims

0Family size

Assignee

INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Huaxiang Yin · Beijing, CN
Zuozhen Fu · Beijing, CN
Qiuxia Xu · Beijing, CN
Dapeng Chen · Beijing, CN

Key dates

Filing date	May 17, 2012
Grant date	Jul 5, 2016
Priority date	—
Expiry date	May 17, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/8311
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a dual metal CMOS device comprising: forming a first type metal work function modulation layer in the first gate trench and the second gate trench; forming a second type work function metal diffusion source layer in the first gate trench and the second gate trench; forming a heat isolation layer that shields the region of the first type device; and thermally annealing the regions where the first type device and the second type device are located.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.