Carbon layer and method of manufacture
US9384991B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2015 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Aug 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing a first metal layer on a substrate, the substrate comprising carbon. A silicide is eptiaxially grown on the substrate, the epitaxially growing the silicide also forming a layer of carbon over the silicide. In an embodiment the carbon layer is graphene, and may be transferred to a semiconductor substrate for further processing to form a channel within the graphene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.