Mark van Dal
6Patents
3h-index
5Co-inventors
42Inventor score
Filing activity: Mar 7, 2012 → Nov 2, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9368604B1 | Method of removing threading dislocation defect from a fin feature of III-V group semiconductor material | Electricity | 5 | Active |
| US9806176B2 | Structure and method for defect passivation to reduce junction leakage for finfet device | Electricity | 3 | Active |
| US10121858B2 | Elongated semiconductor structure planarization | Electricity | 3 | Active |
| US9384991B2 | Carbon layer and method of manufacture | Electricity | 0 | Active |
| US9680027B2 | Nickelide source/drain structures for CMOS transistors | Electricity | 0 | Active |
| US10861933B2 | Elongated semiconductor structure planarization | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.