Method of forming mask structure
US9388495B2 · kind B2 · utility
1Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Oct 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.