Photoresist having improved extreme-ultraviolet lithography imaging performance
US9389506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2015 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Jun 18, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.