Wet oxidation process performed on a dielectric material formed from a flowable CVD process
US9390914B2 · kind B2 · utility
8Cited by
9References
7Claims
0Family size
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Key dates
| Filing date | Feb 14, 2012 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | May 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.