Etching method, storage medium and etching apparatus
US9390933B2 · kind B2 · utility
3Cited by
0References
11Claims
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Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.