Low temperature thin wafer backside vacuum process with backgrinding tape
US9390968B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2011 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Apr 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Vacuum processing, such as a backside metallization (BSM) deposition, is performed on a taped wafer after a gas escape path is formed between a base film of the tape and the wafer frontside surface following backgrind. Venting provided by the gas escape path reduces formation of bubbles under the tape. The gas escape path may be provided, for example, by a selective pre-curing of tape adhesive, to breach an edge seal and place the wafer frontside surface internal to the edge seal in fluid communication with an environment external to the edge seal. With the thinned wafer supported by the pre-cured tape, BSM is then deposited while the wafer and tape are cooled, for example, via a cooled electrostatic chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.