Semiconductor heterojunction device

US9391187B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Godefridus Adrianus Maria Hurkx · Eindhoven, NL
• Jeroen Antoon Croon · Waalre, NL
• Johannes Josephus Theodorus Marinus Donkers · Valkenswaard, NL
• Stephan Heil · Eindhoven, NL
• Jan Sonsky · Leuven, BE

Key dates

• Filing date: May 27, 2015
• Grant date: Jul 12, 2016
• Expiry date: May 27, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/854

Abstract

In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first layer having a first semiconductor disposed on top of the substrate; a second layer has a second semiconductor is disposed on top of the first layer defining an interface between them. The second semiconductor differs from the first semiconductor such that a 2D Electron Gas forms adjacent to the interface. A first terminal couples to a first area of the interface between the first and second layers and a second terminal couples to a second area of the interface between the first and second layers; an electrically conducting channel comprises a metal or a region of the first layer with a higher defect density than another region of the first layer. The channel connects the second terminal and a region of the first layer such that electric charge can flow between them.