Nanomagnetic devices switched with a spin hall effect
US9391262B1 · kind B1 · utility
14Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Dec 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described are Spin Hall Magnetic Random Access Memory (MRAM) cells and arrays. In one embodiment, an apparatus includes a nanomagnet having a cross-sectional area and a spin Hall effect (SHE) material. The SHE material is coupled to a subset of the cross-sectional area of the nanomagnet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.