Junction material, manufacturing method thereof, and manufacturing method of junction structure
US9393645B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2011 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Jul 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12792
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.