Production method for polycrystalline silicon, and reactor for polycrystalline silicon production
US9394606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2012 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Nov 29, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.