Method and apparatus for forming a straight line projection on a semiconductor substrate
US9396944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2012 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Oct 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution. The axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the use of such an apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement, is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.