Method for manufacturing semiconductor structure through forming an additional layer inside opening of a photoresist layer
US9397007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2013 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Jul 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor structure, which comprises: a) forming gate lines extending in a direction on a substrate; b) forming a photoresist layer that covers the semiconductor structure; patterning the photoresist layer to form openings across the gate lines; c) narrowing the openings by forming a self-assembly copolymer inside the openings; and d) cutting the gate lines via the openings to make the gate lines insulated at the openings. Through forming an additional layer on the inner wall of the openings of the photoresist layer, the method for manufacturing a semiconductor structure provided by the present invention manages to reduce the distance between the two opposite walls of the openings in the direction of gate width, namely, the method manages to reduce the distance between the ends of electrically isolated gates located on the same line where it is unnecessary to manufacture a cut mask whose lines are extremely fine. Working area is therefore saved, which accordingly improves integration level of semiconductor devices. In addition, the present invention further provides a semiconductor structure according to the method pro…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.