Package in package (PiP) electronic device and manufacturing method thereof

US9397068B2 · kind B2 · utility

Assignee

• BEIJING UNIVERSITY OF TECHNOLOGY · CN

Inventors

• Fei Qin · Lo Wu, CN
• Guofeng Xia · Shanghai, CN
• Tong An · Beijing, CN
• Wei Wu · Beijing, CN
• Chengyan Liu · Beijing, CN
• Wenhui Zhu · Beijing, CN

Key dates

• Filing date: Dec 4, 2012
• Grant date: Jul 19, 2016
• Expiry date: Dec 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A manufacturing method for Package in Package (PiP) electronic device based on multi-row Quad Flat No-lead (QFN) package is provided wherein the lower surface of plate metallic base material are half-etched to form grooves. Insulation filling material is filled in the half-etched grooves. The upper surface of plate metallic base material is half-etched to form chip pad and multi-row of leads. Encapsulating IC chip for wire bonding, adhesive material, metal wire, chip pad and a plurality of leads to form a multi-row QFN package as an inner package. Flip-chip bonding IC chip with solder bumps on the first metal material layer of leads. Encapsulating IC chip with solder bumps, the multi-row QFN package, adhesive material, and leads to form an array of PiP electronic devices. Sawing and separating the PiP electronic device array, forming PiP electronic device unit.