Semiconductor device
US9397090B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2015 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Apr 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/121
Abstract
A semiconductor device includes first metal-on-semiconductor (MOS), second MOS, and bipolar junction (BJ) structures formed in a substrate. The first MOS structure includes first drain, first channel, and first source regions arranged along a first direction. The first MOS structure further includes a drain electrode formed over and conductively coupled to the first drain region, and a body region formed below and conductively coupled to the channel region. The second MOS structure includes second drain, second channel, and second source regions arranged along a second direction different from the first direction. The BJ structure includes emitter, base, and collector regions. The first source region and the second drain region share a first common semiconductor region in the substrate. The drain electrode and the base region share a second common semiconductor region in the substrate. The body region and the collector region share a third common semiconductor region in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.