Process for forming a stack of different materials, and device comprising this stack
US9397128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2014 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stack of layers defines a filter and is formed by copper on hydrogenated silicon nitride supported by a carrier. The filter includes a layer of hydrogenated silicon nitride, a layer of silicon oxide on the layer of hydrogenated silicon nitride and a layer of copper on the layer of silicon oxide. The layer of hydrogenated silicon nitride may have, in a vicinity of its upper side, a ratio of a number of silicon atoms per cubic centimeter to a number of nitrogen atoms per cubic centimeter lower than 0.8 (or even lower than 0.6), with a number of silicon-hydrogen bonds smaller than or equal to 6×1021 bonds per cubic centimeter (or even smaller than 0.5×1021 bonds per cubic centimeter). The filter further includes an additional layer of copper between the layer of hydrogenated silicon nitride and the carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.