Deep collector vertical bipolar transistor with enhanced gain
US9397164B2 · kind B2 · utility
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4References
5Claims
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Key dates
| Filing date | Nov 18, 2015 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Nov 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit and method having a deep collector vertical bipolar transistor with a first base tuning diffusion. A MOS transistor has a second base tuning diffusion. The first base tuning diffusion and the second base tuning diffusion are formed using the same implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.