Semiconductor device
US9397205B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2015 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device includes a substrate, a first doped well disposed in the substrate, a second doped well disposed in the substrate adjacent to a first side of the first doped well, a buffer region disposed in the first doped well adjacent to a second and opposite side of the first doped well, a gate structure disposed above the first side of the first doped well and extending along a first horizontal direction, a first contact region disposed in the buffer region toward the second side of the first doped well, a second contact region disposed in the buffer region adjacent to the first contact region, and a doped region disposed in the buffer region under the first contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.