Semiconductor device
US9397214B1 · kind B1 · utility
5Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2015 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Feb 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device is provided includes a substrate, a gate structure formed on the substrate, an epitaxial source/drain structure respectively formed at two sides of the gate structure, and a boron-rich interface layer. The boron-rich interface layer includes a bottom-and-sidewall portion and a top portion, and the epitaxial source/drain structure is enclosed by the bottom-and-sidewall portion and the top portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.