Ge—Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region

US9397243B2 · kind B2 · utility

Assignee

• SiFotonics Technologies Co., Ltd. · KY

Inventors

• Tuo Shi · 安丰镇, CN
• Mengyuan Huang · Cupertino, US
• Pengfei Cai · Beijing, CN
• Su Li · Beijing, CN
• Ching-yin Hong · Lexington, US
• Wang Chen · Beijing, CN
• Liangbo Wang · Beijing, CN
• Dong Pan · Taipei, TW

Key dates

• Filing date: Jul 23, 2014
• Grant date: Jul 19, 2016
• Expiry date: Jul 23, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon carrier-energy-relaxation layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.