Patent · US Active

Memory device and erasing method thereof

US9400712B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 22, 2014
Grant dateJul 26, 2016
Priority date
Expiry dateSep 1, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2212/403
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.