Structure for a radio frequency power amplifier module within a radio frequency power amplifier package
US9401682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2014 |
| Grant date | Jul 26, 2016 |
| Priority date | — |
| Expiry date | Sep 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.