Method of forming a target for deposition of doped dielectric films by sputtering
US9404175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2013 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | May 19, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/083
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system that incorporates teachings of the subject disclosure may include, for example, a method in which a selection is made for a first major constituent, a second major constituent and a minor constituent for forming a desired material. The method can include mixing the first major constituent, the second major constituent and the minor constituent in a single mixing step to provide a mixture of constituents. The method can include drying the mixture of constituents to provide a dried mixture of constituents and calcining the dried mixture of constituents to provide a calcinated mixture of constituents. The method can include processing the calcinated mixture of constituents to provide a powder of constituents. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.