Pattern forming method, method for manufacturing electronic device, and electronic device
US9405197B2 · kind B2 · utility
1Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Feb 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a pattern forming method containing: forming a film by using a radiation-sensitive or actinic ray-sensitive resin composition containing: (A) a onium salt compound containing a nitrogen atom in a cationic moiety; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a resin capable of increasing the polarity by the action of an acid to decrease solubility in a developer containing an organic solvent, exposing the film; and developing the exposed film by using a developer containing an organic solvent to form a negative pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.