Semiconductor device manufacturing method and related semiconductor wafer
US9406527B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jul 27, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Jul 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a wafer (in a process of manufacturing semiconductor devices) may include the following steps: using a first slurry set to perform a first chemical mechanical polishing process on the wafer, wherein the wafer includes a plurality of metal gate structures; using a second slurry set to perform a second chemical mechanical polishing process on the wafer, wherein a concentration of a slurry material in the second slurry set is less than a concentration of the slurry material in the first slurry set; performing a cleaning process on the wafer; and providing an anti-reflective coating on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.