Insulation structure formed in a semiconductor substrate and method for forming an insulation structure

US9406550B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Marko Lemke · Dresden, DE
• Rolf Weis · Dresden, DE
• Ralf Rudolf · Dresden, DE

Key dates

• Filing date: Oct 31, 2013
• Grant date: Aug 2, 2016
• Expiry date: Mar 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming an insulation structure in a semiconductor body includes forming a trench extending from a first surface into a semiconductor body, the trench having a first width in a horizontal direction of the semiconductor body, and forming a void spaced apart from the first surface in a vertical direction of the semiconductor body, the void having a second width in a horizontal direction that is greater than the first width, wherein the trench and the void are arranged adjacent to each other in a vertical direction.