Semiconductor device and method for manufacturing the same
US9406694B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2015 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Sep 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76846
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a metal layer containing boron, a semiconductor film extending in a direction intersecting with a direction in which the metal layer extends, a charge storage film provided between the semiconductor film and the metal layer, a first dielectric film provided between the charge storage film and the metal layer, and a nitride film provided between the first dielectric film and the metal layer. The nitride film includes a first titanium nitride film provided in contact with the first dielectric film, a second titanium nitride film provided in contact with the metal layer, and an amorphous nitride film provided between the first titanium nitride film and the second titanium nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.