Patent · US Active

Inductive structure formed using through silicon vias

US9406738B2 · kind B2 · utility

12Cited by

35References

19Claims

0Family size

Assignee

XILINX, INC. · US

Inventors

Vassili Kireev · Sunnyvale, US
James Karp · Saratoga, US

Key dates

Filing date	Jul 20, 2011
Grant date	Aug 2, 2016
Priority date	—
Expiry date	Feb 4, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15311
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An inductor for an integrated circuit can include a first turn comprising a first through silicon via (TSV) coupled to a second TSV. The inductor can include a third TSV coupled to the second TSV.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.