Smart semiconductor switch
US9406754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2014 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/406
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate. At least a first well region is formed in the substrate and doped with dopants of a second type to form a second pn-junction with the substrate. The first well region is electrically connected to the first regions of the vertical transistor via a semiconductor switch. The semiconductor device comprises a detection circuit, which is integrated in the substrate and configured to detect whether the first pn-junctions are reverse biased. The switch is opened when the first pn-junctions are reverse biased and the switch is closed when the first pn-junctions are not reverse biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.