Smart semiconductor switch
US9406755B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2014 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Aug 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
A semiconductor device comprises semiconductor substrate including vertical transistor and with dopants of a first type. Each transistor cell of transistor has body region formed in substrate and with dopants of second type. The body regions form first pn-junctions with substrate. A first well region is formed in substrate and with dopants of a second type forming a second pn-junction with substrate. Switch connects this first well region to body regions. A second well region is formed in the substrate and with dopants of a second type to form third pn-junction with substrate. Detection circuit is integrated in the second well region and to detect whether the first pn-junctions are reverse biased. The switch connects or disconnects the first well region(s) and the body regions of the transistor cell, and is opened, when the first pn-junctions are reverse biased, and closed, when the first pn-junctions are not reverse biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.