Semiconductor device and method of manufacturing the same
US9406877B2 · kind B2 · utility
20Cited by
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26Claims
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Key dates
| Filing date | Jan 8, 2010 |
| Grant date | Aug 2, 2016 |
| Priority date | — |
| Expiry date | Aug 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.