Patent · US Active

Method for producing a silicon single crystal

US9410262B2 · kind B2 · utility

0Cited by

3References

17Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Josef Lobmeyer · Bad Füssing, DE
Georg Brenninger · Oberbergkirchen, DE
Waldemar Stein · Burghausen, DE

Key dates

Filing date	Aug 19, 2013
Grant date	Aug 9, 2016
Priority date	—
Expiry date	Sep 6, 2034

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/06
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A silicon single crystal is produced by a method wherein

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.