Patent · US Active

Method for producing a semiconductor wafer composed of silicon with an epitaxially deposited layer

US9410265B2 · kind B2 · utility

3Cited by
3References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 27, 2011
Grant dateAug 9, 2016
Priority date—
Expiry dateFeb 1, 2034

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B25/12
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Semiconductor wafers composed of silicon with an epitaxially deposited layer, are prepared by:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.