Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device
US9412582B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2015 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Mar 23, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.