Semiconductor device and method of manufacturing semiconductor device
US9412700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Oct 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.