Semiconductor structure with sacrificial anode and passivation layer and method for forming
US9412709B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | May 21, 2013 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Sep 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3651
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A packaged semiconductor device is made by forming a conductive pad on an external surface of an integrated circuit device, forming a passivation layer over the conductive pad, removing a portion of the passivation layer over a bond area on the conductive pad, forming a sacrificial anode around a majority of a periphery surrounding the bond area, forming a conductive bond in the bond area, and forming an encapsulating material around the conductive bond and an exposed portion of the sacrificial anode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.