Semiconductor device
US9412731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Jan 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
Provided is a semiconductor device which includes a substrate including a first region and a second region different from the first region, a first active pattern provided on the substrate in the first region, a second active pattern provided on the substrate in the second region, a first gate structure crossing over the first active pattern and a second gate structure crossing over the second active pattern, first source/drain regions disposed on the first active pattern at opposite sides of the first gate structure, second source/drain regions disposed on the second active pattern at opposite sides of the second gate structure, and auxiliary spacers disposed in the first region to cover a lower portion of each of the first source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.