Semiconductor device and a method of manufacturing the same
US9412747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Nov 19, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0433
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device having a non-volatile memory cell includes forming first insulating films with first conductive films arranged therebetween, recessing the first insulating films using the first conductive films as a mask, so that heights of top surfaces of the first insulating films are lower than heights of top surfaces of the first conductive films, forming a second insulating film over the first conductive and insulating films, forming a second conductive film over the second insulating film, and patterning the first and second conductive films, and the second insulating film. A length of the floating gate in a second direction is larger than a maximum length of the floating gate in a first direction, and a length from a top surface of the second insulating film to a top surface of the floating gate is larger than a length of a space between a plurality the floating gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.