Manufacturing method for silicon carbide semiconductor device
US9412831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2013 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | May 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a silicon carbide semiconductor device having a JFET, after forming a second concave portion configuring a second mesa portion, a thickness of a source region is detected by observing a pn junction between the source region and a first gate region exposed by the second concave portion. Selective etching is conducted on the basis of the detection result to form a first concave portion deeper than the thickness of the source region and configuring a first mesa portion inside of an outer peripheral region in an outer periphery of a cell region, and to make the second concave portion deeper than the second gate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.