Schottky diode with improved surge capability
US9412880B2 · kind B2 · utility
6Cited by
96References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2010 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Mar 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.