Optical tuning of light emitting semiconductor junctions
US9412911B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 7, 2014 |
| Grant date | Aug 9, 2016 |
| Priority date | — |
| Expiry date | Nov 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.