Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon
US9416444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jan 15, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.