Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device
US9417528B2 · kind B2 · utility
5Cited by
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15Claims
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Key dates
| Filing date | May 15, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | May 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.