Patent · US Active

Method of forming a non volatile memory device using wet etching

US9418864B2 · kind B2 · utility

0Cited by

8References

52Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Danny Pak-Chum Shum · Poughkeepsie, US
Alfred Vater · Dresden, DE
John Power · Kilmacthomas, IE
Wolfram Langheinrich · Dresden, DE
Ulrike Bewersdorff-Sarlette · Radebeul, DE

Key dates

Filing date	Jan 30, 2008
Grant date	Aug 16, 2016
Priority date	—
Expiry date	Jan 4, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/40
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one embodiment, a method of forming a semiconductor device is disclosed. A high-k dielectric is deposited of over a semiconductor body, and a portion of the high-k dielectric is wet etched an etchant selected from the group consisting of hot phos, piranha, and SC1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.