Method of forming conductive features
US9418886B1 · kind B1 · utility
3Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jul 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a patterned mask layer over a conductive layer; forming a first dielectric layer over the patterned mask layer and the conductive layer; selectively etching the first dielectric layer, thereby exposing an upper surface of the patterned mask layer, wherein the upper surface of the first dielectric layer is lower than a top surface of the patterned mask layer; removing the patterned mask layer; and selectively etching the conductive layer to form a conductive feature having a tapered profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.