Non-lithographically patterned directed self assembly alignment promotion layers
US9418888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2013 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.