Semiconductor component having through-silicon vias and method of manufacture
US9418923B2 · kind B2 · utility
1Cited by
45References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2013 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Sep 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.