Through-substrate via formation with improved topography control
US9418933B2 · kind B2 · utility
2Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device include a substrate and an interconnect structure over the substrate. The interconnect structure comprising an inter-layer dielectric (ILD) and a first inter-metal dielectric (IMD) formed over the ILD. A through-substrate via (TSV) is formed at the IMD extending a first depth through the interconnect structure into the substrate. A metallic pad is formed at the IMD adjoining the TSV and extending a second depth into the interconnect structure, wherein the second depth is less than the first depth. Connections to the TSV are made through the metallic pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.